Features: • High output power 21.5 dBm• Positive power supply drive VDD=3.4 V• Low current consumption 200 mA• High gain 40 dB Typ.• Low distortion (ACP) 59 dBc Typ.• Small mold package 16-pin SSOPPinoutSpecifications Supply voltage VDD 6 V ...
CXG1010N: Features: • High output power 21.5 dBm• Positive power supply drive VDD=3.4 V• Low current consumption 200 mA• High gain 40 dB Typ.• Low distortion (ACP) 59 dBc Typ....
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Supply voltage |
VDD |
6 |
V |
Voltage between gate and source |
Vgs0 |
1.5 |
V |
Drain current |
IDD |
500 |
mA |
Power dissipation |
PD |
3 |
W |
Channel temperature |
Tch |
175 |
°C |
Operating temperature |
Top |
35 to +85 |
°C |
Storage temperature |
Tstg |
65 to +150 |
°C |
The CXG1010N is a power amplifier for PHS. This IC is designed using the Sony's GaAs J-FET process and operates at a single power supply.