MOSFET P-Ch-Dual Common Source Pwr MOSFETs
CSD75301W1015: MOSFET P-Ch-Dual Common Source Pwr MOSFETs
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 1.2 A | ||
Resistance Drain-Source RDS (on) : | 100 mOhms at 4.5 V | Configuration : | Dual Common Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DSBGA-6 | Packaging : | Reel |
Technical/Catalog Information | CSD75301W1015 |
Vendor | Texas Instruments (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 P-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 1.2A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 1A, 4.5V |
Input Capacitance (Ciss) @ Vds | 195pF @ 10V |
Power - Max | 800mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 2.1nC @ 4.5V |
Package / Case | 6-DSBGA |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | CSD75301W1015 CSD75301W1015 296 24261 1 ND 296242611ND 296-24261-1 |