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CSD25301W1015

MOSFET P-Ch NexFET Power MOSFETs

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SeekIC No. : 00155595 Detail

CSD25301W1015: MOSFET P-Ch NexFET Power MOSFETs

CSD25301W1015 Data Sheet

floor Price/Ceiling Price

US $ .19~.22 / Piece | Get Latest Price
Part Number:
CSD25301W1015
Mfg:
Texas Instruments
Supply Ability:
5000

Price Break

  • Qty
  • 0~2050
  • 2050~3000
  • 3000~6000
  • 6000~12000
  • Unit Price
  • $.22
  • $.21
  • $.2
  • $.19
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 2.2 A
Resistance Drain-Source RDS (on) : 75 mOhms at 4.5 V Configuration : Single Dual Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DSBGA-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 2.2 A
Configuration : Single Dual Drain Triple Source
Resistance Drain-Source RDS (on) : 75 mOhms at 4.5 V
Package / Case : DSBGA-6


Parameters:

Technical/Catalog InformationCSD25301W1015
VendorTexas Instruments (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.2A
Rds On (Max) @ Id, Vgs75 mOhm @ 1A, 4.5V
Input Capacitance (Ciss) @ Vds 270pF @ 10V
Power - Max1.5W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs2.5nC @ 4.5V
Package / Case6-DSBGA
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names CSD25301W1015
CSD25301W1015
296 24259 1 ND
296242591ND
296-24259-1



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