CSD23201W10

MOSFET P-Ch NexFET Power MOSFETs

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SeekIC No. : 00147445 Detail

CSD23201W10: MOSFET P-Ch NexFET Power MOSFETs

floor Price/Ceiling Price

US $ .26~.43 / Piece | Get Latest Price
Part Number:
CSD23201W10
Mfg:
Texas Instruments
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.43
  • $.34
  • $.3
  • $.26
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/6

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 12 V
Gate-Source Breakdown Voltage : - 6 V Continuous Drain Current : 2.2 A
Resistance Drain-Source RDS (on) : 82 mOhms at 4.5 V Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DSBGA-4 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 12 V
Configuration : Single Dual Drain
Continuous Drain Current : 2.2 A
Gate-Source Breakdown Voltage : - 6 V
Resistance Drain-Source RDS (on) : 82 mOhms at 4.5 V
Package / Case : DSBGA-4


Parameters:

Technical/Catalog InformationCSD23201W10
VendorTexas Instruments (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25° C1.1A
Rds On (Max) @ Id, Vgs82 mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds 325pF @ 6V
Power - Max1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs2.4nC @ 4.5V
Package / Case4-DSBGA
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names CSD23201W10
CSD23201W10
296 24258 6 ND
296242586ND
296-24258-6



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