CSD23201W10, US $ .26-.43 , Texas Instruments, CSD23201W10 DataSheet download, circuit diagram from SeekIC.com

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CSD23201W10: MOSFET P-Ch NexFET Power MOSFETs

CSD23201W10 Data Sheet

US $ .26~.43 / Piece | Get Latest Price

Part Number:: CSD23201W10
Mfg:: Texas Instruments
Supply Ability:: 5000

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Upload time: 2024/11/22

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Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	12 V
Gate-Source Breakdown Voltage :	- 6 V	Continuous Drain Current :	2.2 A
Resistance Drain-Source RDS (on) :	82 mOhms at 4.5 V	Configuration :	Single Dual Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	DSBGA-4	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 12 V
Configuration : Single Dual Drain
Continuous Drain Current : 2.2 A
Gate-Source Breakdown Voltage : - 6 V
Resistance Drain-Source RDS (on) : 82 mOhms at 4.5 V
Package / Case : DSBGA-4

Parameters:

Technical/Catalog Information	CSD23201W10
Vendor	Texas Instruments (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25° C	1.1A
Rds On (Max) @ Id, Vgs	82 mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds	325pF @ 6V
Power - Max	1W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	2.4nC @ 4.5V
Package / Case	4-DSBGA
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	CSD23201W10 CSD23201W10 296 24258 6 ND 296242586ND 296-24258-6

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CSD23201W10

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