MOSFET N-Ch NexFET Pwr MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | - 8 V, + 10 V | Continuous Drain Current : | 21 A | ||
Resistance Drain-Source RDS (on) : | 0.0045 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SON-8 | Packaging : | Reel |
Technical/Catalog Information | CSD16323Q3 |
Vendor | Texas Instruments (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25° C | 60A |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 24A, 8V |
Input Capacitance (Ciss) @ Vds | 1300pF @ 12.5V |
Power - Max | 3W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 8.4nC @ 4.5V |
Package / Case | 8-SON |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | CSD16323Q3 CSD16323Q3 296 24522 1 ND 296245221ND 296-24522-1 |