Specifications SYMBOL CQ202-4M CQ202-4N UNITS 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=80°C)Peak One Cycle Surge (t=10ms)I2t Value for Fusing (t=10ms)Peak Gate Power (tp=10µs)Average Gate Power DissipationPeak Gate Current (tp=10&mi...
CQ202-4N: Specifications SYMBOL CQ202-4M CQ202-4N UNITS 600 800 V Peak Repetitive Off-State VoltageRMS On-State Current (TC=80°C)Peak One Cycle Surge (t=10ms)I2t Value for Fus...
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SYMBOL |
CQ202 -4M |
CQ202 -4N |
UNITS | |
600 |
800 |
V | ||
Peak Repetitive Off-State Voltage RMS On-State Current (TC=80°C) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance |
VDRM IT(RMS) ITSM I2t PGM PG(AV) IGM Tstg TJ JA JC |
4.0 40 2.4 3.0 0.2 1.2 -40 to +150 -40 to +125 60 7.5 |
A A A2s W W A °C °C °C/W °C/W |
The CENTRAL SEMICONDUCTOR CQ202-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants.