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CPH6801

Features: · The CPH6801 consists of a P-channel MOSFET that features low ON resistance, ultrahigh-speed switching, and low-voltage drive, and a shottky barrier diode that features short reverse recovery time andlow forward voltage, therefore enabling high-density mounting.· Each device incorporate...

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CPH6801: Features: · The CPH6801 consists of a P-channel MOSFET that features low ON resistance, ultrahigh-speed switching, and low-voltage drive, and a shottky barrier diode that features short reverse reco...

CPH6801 Data Sheet

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Part Number:
CPH6801
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· The CPH6801 consists of a P-channel MOSFET that features low ON resistance, ultrahigh-speed switching, and low-voltage drive, and a shottky barrier diode that features short reverse recovery time and low forward voltage, therefore enabling high-density mounting.
· Each device incorporated in the CPH6801 is equivalent with the 2SJ560 and the SBS004, respectively.


Specifications

Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
VDSS
-20
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
-1
A
Drain Current (Pulse)
IDP
PW 10ms, duty cycle 1%
-4
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900m50.8mm)
0.9
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to +125
m
[SBD]
Repetitive Peak Reverse Voltage
VRRM
15
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
15
V
Average Output Current
IO
1
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
10
A
Junction Temperature
Tj
-55 to +125
Storage Temperature
Tstg
-55 to +150



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