Features: · Adoption of FBET, MBIT processes.· High current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· Ultrasmall-package of 0.9mm mounting heighfacilitates miniaturization in end products. · High allowable power dissipation.Application· DC-DC converters rel...
CPH3105: Features: · Adoption of FBET, MBIT processes.· High current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· Ultrasmall-package of 0.9mm mounting heighfacilitates m...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
(-50)80 |
V | |
Collector-to-Emitter Voltage |
VCEO |
(-50)80 |
V | |
Collector-to-Emitter Voltage |
VCEO |
(-)50 |
V | |
Emitter-to-Base Voltage |
VEBO |
(-)6 |
V | |
Collector Current |
IC |
(-)3 |
A | |
Collector Current (Pulse) |
ICP |
(-)6 |
A | |
Base Current |
IB |
(-)600 |
mA | |
Collector Dissipation |
PC |
Mounted on a ceramic board (600m*0.8mm) |
0.9 |
W |
Junction Temperature |
Tch |
150 |
||
Storage Temperature |
Tstg |
-55 to +150 |
Absolute maximum ratings | |
---|---|
VCEO [V] | 50 |
IC [A] | 3 |
PC [W] | 0.9
When mounted on ceramic substrate (600mm²*0.8mm) |
Electrical characteristics | |
---|---|
hFE min | 200 |
hFE max | 560 |
VCE [V] | 2 |
IC [A] | 0.1 |
VCE (sat) typ [V] | 0.185 |
VCE (sat) max [V] | 0.5 |
IC [A] | 2 |
IB [mA] | 100 |