DescriptionThe CP6499CM is designed as one kind of PNP, 8.0A power transistor chip that has seven points of process details:(1)Process: multiepitaxial mesa;(2)Die Size: 120 x 145 MILS;(3)Die Thickness: 13 MILS;(4)Base Bonding Pad Area: 20 x 45 MILS;(5)Emitter Bonding Pad Area: 14 x 70 MILS;(6)Top ...
CP6499CM: DescriptionThe CP6499CM is designed as one kind of PNP, 8.0A power transistor chip that has seven points of process details:(1)Process: multiepitaxial mesa;(2)Die Size: 120 x 145 MILS;(3)Die Thickne...
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The CP6499CM is designed as one kind of PNP, 8.0A power transistor chip that has seven points of process details:(1)Process: multiepitaxial mesa;(2)Die Size: 120 x 145 MILS;(3)Die Thickness: 13 MILS;(4)Base Bonding Pad Area: 20 x 45 MILS;(5)Emitter Bonding Pad Area: 14 x 70 MILS;(6)Top Side Metalization: Al - 50,000 A;(7)Back Side Metalization: Cr / Ni / Ag - 10,000 A. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .