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CNZ1109

Features: ·Highly precise position detection : 0.7 mm·Fast response : tr, tf = 6 ms (typ.)·Small output current variation against change in temperature·Deep and wide gap between emitting and detecting elementsSpecifications Parameter Symbol Ratings Unit Input (Light emitting diode) Rev...

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SeekIC No. : 004315229 Detail

CNZ1109: Features: ·Highly precise position detection : 0.7 mm·Fast response : tr, tf = 6 ms (typ.)·Small output current variation against change in temperature·Deep and wide gap between emitting and detecti...

CNZ1109 Data Sheet

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Part Number:
CNZ1109
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·Highly precise position detection : 0.7 mm
·Fast response : tr, tf = 6 ms (typ.)
·Small output current variation against change in temperature
·Deep and wide gap between emitting and detecting elements


Specifications

Parameter Symbol Ratings Unit
Input (Light emitting diode) Reverse voltage (DC) VR 3 V
Forward current (DC) IF 50 mA
Power dissipation PD*1 75 mW
Output (Photo transistor) Collector current IC 20 mA
Collector to emitter voltage VCEO 30 V
Emitter to collector voltage VECO 5 V
Collector power dissipation PC*2 100 mW
Temperature Operating ambient temperature Topr 25 to +85
Storage temperature Tstg 40 to +100

*1 Input power derating ratio is 1.0 mW/°C at Ta 25°C.
*2 Output power derating ratio is 1.34 mW/°C at Ta 25°C.


Description

ON1109 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. CNZ1109 two elements are arranged so as to face each other, and objects passing between them are detected.




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