Transistor Output Optocouplers Phototransistor Out Single CTR 100-200%
CNY75B: Transistor Output Optocouplers Phototransistor Out Single CTR 100-200%
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Input Type : | DC | Maximum Collector Emitter Voltage : | 70 V | ||
Maximum Collector Emitter Saturation Voltage : | 0.3 V | Isolation Voltage : | 5000 Vrms | ||
Current Transfer Ratio : | 200 % | Maximum Forward Diode Voltage : | 1.6 V | ||
Maximum Collector Current : | 50 mA | Maximum Power Dissipation : | 200 mW | ||
Maximum Operating Temperature : | + 110 C | Minimum Operating Temperature : | - 55 C | ||
Package / Case : | PDIP-6 | Packaging : | Tube |
he CNY75B consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The features of it are as follows: (1)rated impulse voltage (transient overvoltage): VIOTM = 6 kV peak; (2)isolation test voltage (partial discharge test voltage): Vpd = 1.6 kV; (3)rated isolation voltage (RMS includes DC): VIOWM = 600 VRMS (848 V peak); (4)rated recurring peak voltage (repetitive): VIORM = 600 VRMS; (5)creeping current resistance according to: VDE 0303/IEC 112; (6)comparative Tracking Index: CTI = 275; (7)thickness through insulation . 0.75 mm; (8)further approvals: BS 415, BS 7002, SETI: IEC 950, UL 1577: File No: E 76222; (9)CTR offered in 3 groups.
What comes next is about CNY75B maximum ratings: (1)reverse voltage: 5 V; (2)forward current: 60 mA; (3)forward surge current: 3 A; (4)power dissipation: 100 mW; (5)junction temperature: 125 °C; (6)collector base voltage: 90 V; (7)collector emitter voltage: 90 V; (8)emitter collector voltage: 7 V; (9)collector current: 50 mA; (10)collector peak current: 100 mA; (11)power dissipation: 150 mW; (12)junction temperature: 125 °C.
The following is about CNY75B electrical characteristics: (1)gate-source breakdown voltage: -1.65V max and 1.25V typical at IF = 50 mA; (2)breakdown voltage: 5V min at IR = 100 A; (3)junction capacitance: 50pF typical at VR = 0, f = 1 MHz; (4)collector base breakdown voltage: 90V min at IC = 100 A; (5)collector emitter breakdown voltage: 90V min at IC = 1 mA; (6)emitter collector breakdown voltage: 7V min at IE = 100 A; (7)collector emitter cut-off current: 150nA max at VCE = 20 V, IF = 0. There is not much information about the product, if you want to get more information, please pay attention to our website and we will update it in time.