Transistor Output Optocouplers Phototransistor Out
CNY64: Transistor Output Optocouplers Phototransistor Out
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Input Type : | DC | Maximum Collector Emitter Voltage : | 32 V | ||
Maximum Collector Emitter Saturation Voltage : | 0.3 V | Isolation Voltage : | 8200 Vrms | ||
Current Transfer Ratio : | 50 % to 300 % | Maximum Forward Diode Voltage : | 1.6 V | ||
Maximum Collector Current : | 50 mA | Maximum Power Dissipation : | 250 mW | ||
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 55 C | ||
Package / Case : | DIP-4 | Packaging : | Tube |
• Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak)
• Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS
• Thickness through insulation 3 mm
• Creepage current resistance according to VDE 0303/IEC 60112 Comparative Tracking Index: CTI 200
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
For appl. class I - IV at mains voltage 300 V
For appl. class I - IV at mains voltage 600 V
For appl. class I - III at mains voltage 1000 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-
5-5 pending, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.
Parameter | Test condition | Symbol | Value | Unit |
Reverse voltage |
VR | 5 | V | |
Forward current | IF | 75 | mA | |
Forward surge current |
tp 10 s | IFSM | 1.5 | A |
Power dissipation | Pdiss | 120 | mW | |
Junction temperature | Tj | 100 | °C |
Parameter |
Test condition | Symbol | Value | Unit |
Collector emitter voltage | VCEO | 32 | V | |
Emitter collector voltage |
VECO | 7 | V | |
Collector current | IC | 50 | mA | |
Collector peak current | tp/T = 0.5, tp 10 ms | ICM | 100 | mA |
Power dissipation |
Pdiss | 130 | mW | |
Junction temperature | Tj | 100 | °C |
Parameter |
Test condition | Symbol | Value | Unit |
AC isolation test voltage (RMS) | t = 1 min | VISO | 8.2 | kV |
Total power dissipation |
Ptot | 250 | mW | |
Ambient temperature range | Tamb | - 55 to + 85 | °C | |
Storage temperature range |
Tstg | - 55 to + 100 | °C | |
Soldering temperature | 2 mm from case, t 10 s | Tsld | 260 | °C |