CNW85

Transistor Output Optocouplers DIP-6 PHOTO TRANS

product image

CNW85 Picture
SeekIC No. : 00103541 Detail

CNW85: Transistor Output Optocouplers DIP-6 PHOTO TRANS

floor Price/Ceiling Price

Part Number:
CNW85
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/7

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Input Type : DC Maximum Collector Emitter Voltage : 80 V
Maximum Collector Emitter Saturation Voltage : 0.4 V Isolation Voltage : 5900 Vrms
Current Transfer Ratio : 3.2 % Maximum Forward Diode Voltage : 1.5 V
Maximum Collector Current : 100 mA Maximum Power Dissipation : 200 mW
Maximum Operating Temperature : + 100 C Minimum Operating Temperature : - 40 C
Package / Case : PDIP-6    

Description

Packaging :
Maximum Collector Emitter Voltage : 80 V
Maximum Collector Emitter Saturation Voltage : 0.4 V
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 40 C
Input Type : DC
Maximum Power Dissipation : 200 mW
Package / Case : PDIP-6
Maximum Collector Current : 100 mA
Isolation Voltage : 5900 Vrms
Current Transfer Ratio : 3.2 %


Features:

• Wide body DIL encapsulation, with a pin distance of 10.16 mm.
• Minimum creepage distance 10 mm.
• High current transfer ratio and Low Saturation Voltage, making the device suitable for use with TTL integrated circuits.
• High degree of AC and DC insulation (5900 V (RMS) and 8340 V (DC)).
• Minimum 2 mm isolation thickness between emitter and detector. (CNW84/85 only).
• An external clearance 0f 9.6 mm minimum and an external creepage distance of 10 mm minimum.
• Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only).
• Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only).
• UL recognized (File # E90700)



Application

The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor.
The CNW82 and CNW84 do not have the base pin connected for improved noise immunity.



Specifications

  Connection Diagram


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Computers, Office - Components, Accessories
Power Supplies - Board Mount
Crystals and Oscillators
Prototyping Products
DE1
Cables, Wires
View more