CMPTH10

Maximum DC Collector Current :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Emitter- Base Voltage VEBO : 3 V
Collector- Emitter Voltage VCEO Max : 25 V
Maximum Operating Frequency : 650 MHz
DC Collector/Base Gain hfe Min : 60 at 4 mA at 10 V


Specifications

	SYMBOL		UNITS
Collector-Base Voltage	VCBO	30	V
Collector-Emitter Voltage	VCEO	25	V
Emitter-Base Voltage	VEBO	3.0	V
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65 to +150	°C
Thermal Resistance	JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output oscillator applications.