CMPTA63

Mounting Style : SMD/SMT
Transistor Polarity : PNP
Configuration : Single
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 0.5 A
Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 10 V
Maximum Collector Cut-off Current : 0.1 uA
Package / Case : SOT-23
Collector- Base Voltage VCBO : 30 V
Packaging : Box
Power Dissipation : 350 mW


Specifications

	SYMBOL		UNITS
Collector-Base Voltage	VCBO	30	V
Collector-Emitter Voltage	VCEO	30	V
Emitter-Base Voltage	VEBO	10	V
Continuous Collector Current	IC	500	mA
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65 to +150	°C
Thermal Resistance	JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary silicon darlington transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain.