Transistors Bipolar (BJT) NPN Extremely High Voltage
CMPTA46: Transistors Bipolar (BJT) NPN Extremely High Voltage
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 450 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.5 A |
DC Collector/Base Gain hfe Min : | 40 at 1 mA at 10 V | Configuration : | Single |
Maximum Operating Frequency : | 20 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-23 |
Packaging : | Reel |
SYMBOL | UNITS | ||
Collector-Base Voltage | VCBO | 450 | V |
Collector-Emitter Voltage | VCEO | 480 | V |
Emitter-Base Voltage | VEBO | 6.0 | V |
Collector Current | IC | 500 | A |
Power Dissipation | PD | 350 | mW |
Operating and Storage | |||
Junction Temperature | TJ,Tstg | -65 to +150 | °C |
Thermal Resistance | JA | 357 | °C/W |