SpecificationsSYMBOL UNITSCollector-Base Voltage VCBO 100 VCollector-Emitter Voltage VCES 100 VEmitter-Base VoltageVEBO 12VCollector Current IC 500mAPower DissipationPD 350 mWOperating and StorageJunction TemperatureoTJ ,Tstg-65 to +150 Thermal Resistanceo JA 357 /WDescriptionThe CENTRAL SEMICONDU...
CMPTA29: SpecificationsSYMBOL UNITSCollector-Base Voltage VCBO 100 VCollector-Emitter Voltage VCES 100 VEmitter-Base VoltageVEBO 12VCollector Current IC 500mAPower DissipationPD 350 mWOperating and StorageJu...
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SYMBOL UNITS
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCES 100 V
Emitter-Base Voltage VEBO 12 V
Collector Current IC 500 mA
Power Dissipation PD 350 mW
Operating and Storage
Junction Temperatureo TJ ,Tstg -65 to +150
Thermal Resistanceo JA 357 /W
The CENTRAL SEMICONDUCTOR CMPTA29 is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high voltage and high gain.
Marking Code is C29.