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CMPTA1

Specifications SYMBOL UNITS Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 10 V Continuous Collecto...

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CMPTA1: Specifications SYMBOL UNITS Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 ...

CMPTA1 Data Sheet

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Part Number:
CMPTA1
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

  SYMBOL   UNITS
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 10 V
Continuous Collector Current IC 500 mA
Power Dissipation PD 350 mW
Operating and Storage      
Junction Temperature TJ,Tstg -65 to +150 °C
Thermal Resistance JA 357 °C/W



Description

The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary silicon darlington transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain.


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