CMPT930

Specifications SYMBOL UNITS Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 30 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +...

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SeekIC No. : 004314864 Detail

CMPT930: Specifications SYMBOL UNITS Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 30 mA Power...

floor Price/Ceiling Price

Part Number:
CMPT930
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/13

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Product Details

Description



Specifications

  SYMBOL   UNITS
Collector-Base Voltage VCBO 45 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC 30 mA
Power Dissipation PD 350 mW
Operating and Storage      
Junction Temperature TJ,Tstg -65 to +150 °C
Thermal Resistance JA 357 °C/W



Description

The CENTRAL SEMICONDUCTOR CMPT930 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier applications.


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