Specifications SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 12 V Collector Current IC 500 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +...
CMPT6427: Specifications SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 12 V Collector Current IC 500 mA Power...
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SYMBOL | UNITS | ||
Collector-Base Voltage | VCBO | 40 | V |
Collector-Emitter Voltage | VCEO | 40 | V |
Emitter-Base Voltage | VEBO | 12 | V |
Collector Current | IC | 500 | mA |
Power Dissipation | PD | 350 | mW |
Operating and Storage | |||
Junction Temperature | TJ,Tstg | -65 to +150 | °C |
Thermal Resistance | JA | 357 | °C/W |
The CENTRAL SEMICONDUCTOR CMPT6427 type is a NPN Silicon Darlington Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain.