CMPT5551

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Maximum Operating Frequency : 300 MHz
Package / Case : SOT-23
Collector- Emitter Voltage VCEO Max : 160 V
Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 80 at 1 mA at 5 V


Specifications

	SYMBOL		UNITS
Collector-Base Voltage	VCBO	180	V
Collector-Emitter Voltage	VCEO	160	V
Emitter-Base Voltage	VEBO	5.0	V
Collector Current	IC	600	mA
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65 to +150	°C
Thermal Resistance	JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.