CMPT5401

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 300 MHz
Package / Case : SOT-23
Maximum DC Collector Current : 0.5 A
Packaging : Box
Collector- Emitter Voltage VCEO Max : 150 V
DC Collector/Base Gain hfe Min : 50 at 1 mA at 5 V


Specifications

	SYMBOL		UNITS
Collector-Base Voltage	VCBO	160	V
Collector-Emitter Voltage	VCEO	150	V
Emitter-Base Voltage	VEBO	5.0	V
Collector Current	IC	500	mA
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65 to +150	°C
Thermal Resistance	JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMPT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.