Transistors Bipolar (BJT) PNP GP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 50 V |
Emitter- Base Voltage VEBO : | - 3 V | Maximum DC Collector Current : | 0.05 A |
DC Collector/Base Gain hfe Min : | 250 at 0.1 mA at 5 V | Configuration : | Single |
Maximum Operating Frequency : | 40 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-23 |
Packaging : | Box |
SYMBOL | UNITS | ||
Collector-Base Voltage | VCBO | 50 | V |
Collector-Emitter Voltage | VCEO | 50 | V |
Emitter-Base Voltage | VEBO | 3.0 | V |
Collector Current | IC | 50 | mA |
Power Dissipation | PD | 350 | mW |
Operating and Storage | |||
Junction Temperature | TJ,Tstg | -65 to +150 | °C |
Thermal Resistance | JA | 357 | °C/W |