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Specifications SYMBOL UNITS Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 3.0 V Collector Current IC 50 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +...

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SeekIC No. : 004314853 Detail

CMPT5086: Specifications SYMBOL UNITS Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 3.0 V Collector Current IC 50 mA Power...

CMPT5086 Data Sheet

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Part Number:: CMPT5086
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/5/19

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Specifications SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector-Emitter ...

Product Details

Description

Specifications

	SYMBOL		UNITS
Collector-Base Voltage	V_CBO	50	V
Collector-Emitter Voltage	V_CEO	50	V
Emitter-Base Voltage	V_EBO	3.0	V
Collector Current	I_C	50	mA
Power Dissipation	P_D	350	mW
Operating and Storage
Junction Temperature	T_J,T_stg	-65 to +150	°C
Thermal Resistance	_JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise.

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CMPT5086

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