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CMPF4393

Specifications SYMBOL UNITS Drain-Source Voltage VGD 40 V Gate-Source Voltage VS 40 V Drain-Source Voltage VDS 40 V Gate Current IG 50 mA ...

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SeekIC No. : 004314835 Detail

CMPF4393: Specifications SYMBOL UNITS Drain-Source Voltage VGD 40 V Gate-Source Voltage VS 40 V ...

CMPF4393 Data Sheet

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Part Number:
CMPF4393
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

  SYMBOL   UNITS
Drain-Source Voltage VGD 40 V
Gate-Source Voltage VS 40 V
Drain-Source Voltage VDS 40 V
Gate Current IG 50 mA
Power Dissipation PD 350 mW
Operating and Storage      
Junction Temperature TJ,Tstg -65 to +150 °C
Thermal Resistance JA 357 °C/W



Description

The CENTRAL SEMICONDUCTOR CMPF4391 series types are N-Channel Silicon Field Effect Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for switching applications.


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