CMPD914

Product : Switching Diodes
Packaging : Reel
Max Surge Current : 4 A
Forward Voltage Drop : 1 V
Configuration : Single
Recovery Time : 4 ns
Operating Temperature Range : - 65 C to + 150 C
Maximum Reverse Leakage Current : 5 uA
Peak Reverse Voltage : 75 V
Forward Continuous Current : 0.25 A
Package / Case : SOT-23
Maximum Power Dissipation : 0.35 W


Specifications

	SYMBOL		UNITS
Continuous Reverse Voltage	VR	75	V
Peak Repetitive Reverse Voltage	VRRM	100
Continuous Forward Current	IF	250	mA
Peak Repetitive Forward Current	IFRM	250	mA
Forward Surge Current, tp=1 sec.	IRSM	4000	mA
Forward Surge Current, tp=1 mses	IFSM	2000	mA
Forward Surge Current, tp=1 ses	IFSM	1000	mA
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65to+150	°C
Thermal Resistance	JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications.