CMPD7006C

Pinout

Specifications

	SYMBOL		UNITS
Continuous Reverse Voltage	VR	600	V
Peak Repetitive Reverse Voltage	VRRM	600	V
Continous Forward Current	IF	100	mA
Peak Repetitive Forward Current	IFRM	300	mA
Forward Surge Current, tp=1.0 s	IFSM	4.0	A
Forward Surge Current, tp=1.0 s	IFSM	1.0	A
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65 to +150	°C
Thermal Resistance	JA	357	°C/W

Description

The Central Semiconductor CMPD7006, CMPD7006A, CMPD7006C and CMPD7006S are silicon switching diodes with various diode configurations, manufactured by the epitaxial planar process and packaged in an epoxy molded SOT-23 surface mount case. These devices are designed for applications requiring high voltage switching diodes.