CMPD6001S

Product : Switching Diodes
Packaging : Reel
Max Surge Current : 4 A
Peak Reverse Voltage : 100 V
Configuration : Dual Series
Recovery Time : 3000 ns
Operating Temperature Range : - 65 C to + 150 C
Forward Continuous Current : 0.25 A
Forward Voltage Drop : 1.1 V
Package / Case : SOT-23
Maximum Power Dissipation : 0.35 W
Maximum Reverse Leakage Current : 500 pA


Specifications

	SYMBOL		UNITS
Continuous Reverse Voltage	VR	75	V
Peak Repetitive Reverse Voltage	VRRM	100	V
Continuous Forward Current	IF	250	mA
Peak Repetitive Forward Current	IFRM	250	mA
Forward Surge Current, tp=1 s.	IFSM	4000	mA
Forward Surge Current, tp=1 s	IFSM	1000	mA
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65to+150	°C
Thermal Resistance	JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring a extremely low leakage diode.