CMPD5001S

Product : Switching Diodes
Packaging : Reel
Peak Reverse Voltage : 300 V
Forward Continuous Current : 225 mA
Max Surge Current : 4 A
Recovery Time : 50 ns
Forward Voltage Drop : 1 V
Maximum Reverse Leakage Current : 0.1 uA
Configuration : Dual Series
Operating Temperature Range : - 65 C to + 150 C
Package / Case : SOT-23
Maximum Power Dissipation : 0.35 W


Specifications

	SYMBOL		UNITS
Continuous Reverse Voltage	VR	120	V
Continuous Forward Current	IF	400	mA
Peak Repetitive Forward Current	IFRM	800	mA
Peak Repetitive Reverse Voltage	IRRM	600	mA
Forward Surge Current, tp=1s	IFSM	6000	mA
Forward Surge Current, tp=1 s	IFSM	1500	mA
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65to+150	°C
Thermal Resistance	JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load applications requiring extremely high current capability.