CMPD2005S

Product : Switching Diodes
Packaging : Reel
Forward Continuous Current : 225 mA
Max Surge Current : 4 A
Recovery Time : 50 ns
Maximum Reverse Leakage Current : 100 nA
Forward Voltage Drop : 1.25 V
Configuration : Dual Series
Operating Temperature Range : - 65 C to + 150 C
Package / Case : SOT-23
Peak Reverse Voltage : 350 V
Maximum Power Dissipation : 0.35 W


Specifications

	SYMBOL		UNITS
Continuous Reverse Voltage	VR	300	V
Peak Repetitive Reverse Voltage	VRRM	350	V
Peak Repetitive Reverse Current	IO	200	mA
Continuous Forward Current	IF	225	mA
Peak Repetitive Forward Current	IFMR	625	mA
Forward Surge Current, tp= 1s	IFSM	4.0	A
Forward Surge Current, tp= 1s	IFSM	1.0	A
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65 to +150	°C
Thermal Resistance	JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMPD2005S contains two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-23 surface mount package, designed for applications requiring high voltage capability.