CMOSH-4E

Configuration : Single
Mounting Style : SMD/SMT
Product : Schottky Diodes
Forward Voltage Drop : 1 V
Packaging : Reel
Operating Temperature Range : - 65 C to + 150 C
Peak Reverse Voltage : 40 V
Package / Case : SOD-523
Recovery Time : 5 ns
Max Surge Current : 0.75 A
Forward Continuous Current : 0.1 A
Maximum Reverse Leakage Current : 0.5 uA at 25 V
Maximum Power Dissipation : 250 mW


Specifications

	SYMBOL		UNITS
Peak Repetitive Reverse Voltage	VRRM	40	V
Continuous Forward Current	IF	200	mA
Peak Repetitive Forward Current	IFRM	350	mA
Forward Surge Current, tp=10ms	IFSM	750	mA
Power Dissipation	PD	250	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65 to +150	°C
Thermal Resistance	JA	500	°C/W

Description

The CENTRAL SEMICONDUCTOR CMOSH-4E is an Enhanced version of the CMOSH-3 Silicon Schottky Diode in an SOD-523 Surface Mount Package.