Transistors Bipolar (BJT) NPN Complementary Enhanced
CMLT3904E: Transistors Bipolar (BJT) NPN Complementary Enhanced
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 40 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.2 A |
DC Collector/Base Gain hfe Min : | 90 at 0.1 mA at 1 V | Configuration : | Dual |
Maximum Operating Frequency : | 300 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-563 |
Packaging : | Reel |
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
SYMBOL | UNITS | ||
Collector-Base Voltage | VCBO | 60 | V |
Collector-Emitter Voltage | VCEO | 40 | V |
Emitter-Base Voltage | VEBO | 6.0 | V |
Collector Current | IC | 200 | mA |
Power Dissipation | PD | 350 | mW (Note 1) |
Power Dissipation | PD | 300 | mW (Note 2) |
Power Dissipation | PD | 150 | mW (Note 3) |
Operating and Storage | |||
Junction Temperature | TJ,Tstg | -65 to +150 | °C |
Thermal Resistance | JA | 357 | °C/W |