Specifications SYMBOL UNITS Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance JA 357 °C/WDescriptionThe Central Semiconductor CMLM0205 is a Multi Discrete Module™ consisting of a single NPN T...
CMLM2205: Specifications SYMBOL UNITS Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance JA 357 °C/WDescript...
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US $.1 - .11 / Piece
Discrete Semiconductor Modules N-Ch 450mA MOSFET & 40V 500mA Schottky
US $.1 - .11 / Piece
Discrete Semiconductor Modules P-Ch 450mA MOSFET & 40V 500mA Schottky
SYMBOL | UNITS | ||
Power Dissipation | PD | 350 | mW |
Operating and Storage | |||
Junction Temperature | TJ, Tstg | -65 to +150 | °C |
Thermal Resistance | JA | 357 | °C/W |
The Central Semiconductor CMLM0205 is a Multi Discrete Module™ consisting of a single NPN Transistor and Schottky Diode packaged in a space saving PICOmini™ SOT-563 case. CMLM2205 is designed for small signal general purpose applications where size and operational efficiency are prime requirements.
• Combination: Small Signal Switching NPN Transistor and Low VF Schottky Diode.
• Complementary Device: CMLM0705