CME7660 Series

• Both P-type and N-type low barrier silicon available
• Low 1/f noise
• Bonded junctions for reliability
• Planar passivated beam-lead and chip construction
• See also zero bias silicon schottky barrier detector diodes

Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads

Skyworks packaged, beam-lead and chip Schottky barrier detector diodes CME7660 Series are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-type silicon is also available.