CM900HB-90H

Features:

· Low Drive Power
· Low VCE(sat)
· Super-Fast Recovery Free-Wheel Diode
· Isolated Baseplate for Easy Heat Sinking




Application

· Traction
· Medium Voltage Drives
· High Voltage Power Supplies




Specifications

Ratings	Symbol	CM900HB-90H	Units
Junction Temperature	Tj	-40 to 150	°C
Storage Temperature	Tstg	-40 to 125	°C
Collector-Emitter Voltage (VGE = 0V)	VCES	4500	Volts
Gate-Emitter Voltage (VGE = 0V)	VCES	±20	Volts
Collector Current (Tc = 25°C)	IC	900	Amperes
Peak Collector Current(Pulse)	ICM	1800*	Amperes
Diode Forward Current** (Tc = 25°C)	IE	900	Amperes
Diode Forward Surge Current**(Pulse)	IEM	1800*	Amperes
Maximum Collector Dissipation (Tc = 25°C IGBT Part,Tj <125°C)	Pc	10000	Watts
Max. Mounting Torque, M8 Terminal Screws	-	115	in-lb
Max. Mounting Torque, M6 Mounting Screws	-	53	in-lb
Max. Mounting Torque M4 Auxiliary Terminal Screws	-	17	in-lb
Module Weight (Typical)	-	2.2	kg
V Isolation (Charged Part to Baseplate, AC 60Hz 1 min.)	Viso	6000	Vrms

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each CM900HB-90H module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.