CM69R818A

Features: • Byte Write Control• Single 3.3 V +10%, 5% Operation• HSTL I/O (JEDEC Standard JESD86 Class I Compatible)• HSTL User Selectable Input TripPoint• HSTL Compatible Programmable Impedance Output Drivers• Register to Register Synchronous Operation̶...

product image

CM69R818A Picture
SeekIC No. : 004314625 Detail

CM69R818A: Features: • Byte Write Control• Single 3.3 V +10%, 5% Operation• HSTL I/O (JEDEC Standard JESD86 Class I Compatible)• HSTL User Selectable Input TripPoint• HSTL Com...

floor Price/Ceiling Price

Part Number:
CM69R818A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Byte Write Control
• Single 3.3 V +10%, 5% Operation
• HSTL I/O (JEDEC Standard JESD86 Class I Compatible)
• HSTL User Selectable Input TripPoint
• HSTL Compatible Programmable Impedance Output Drivers
• Register to Register Synchronous Operation
• Asynchronous Output Enable
• Boundary Scan (JTAG) IEEE 1149.1 Compatible
• Differential Clock Inputs
• Optional x 18 or x 36 organization
• MCM69R736A/818A5 = 5 ns
  MCM69R736A/818A6 = 6 ns
  MCM69R736A/818A7 = 7 ns
  MCM69R736A/818A8 = 8 ns
• Sleep Mode Operation (ZZ Pin)
• 119 Bump, 50 mil (1.27 mm) Pitch, 14 mm x 22 mm Plastic Ball Grid Array (PBGA) Package



Specifications

Rating Symbol Value Unit
Core Supply Voltage VDD 0.5 to + 4.6 V
Output Supply Voltage VDDQ 0.5 to VDD + 0.5 V
Voltage On Any Pin Vin 0.5 to VDD + 0.5 V
Input Current (per I/O) Iin ± 50 mA
Output Current (per I/O) Iout ± 70 mA
Power Dissipation (See Note 2) PD - W
Operating Temperature TA 0 to + 70 °C
Temperature Under Bias Tbias 10 to + 85 °C
Storage Temperature Tstg 55 to + 125 °C



Description

The MCM69R736A/818A is a 4 megabit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch,Telecom, and other high speed memory applications. The MCM69R818A organized as 256K words by 18 bits, and the MCM69R736A organized as 128K words by 36 bits wide are fabricated in Motorola's high performance silicon gate BiCMOS technology.

The differential CK clock inputs CM69R818A control the timing of read/write operations of the RAM. At the rising edge of the CK clock all addresses, write enables, and synchronous selects are registered. An internal buffer and special logic enable the memory to accept write data on the rising edge of the CK clock a cycle after address and control signals. Read data is driven on the rising edge of the CK clock also.|

The RAM uses HSTL inputs and outputs. The adjustable input trip point (Vref) and output voltage (VDDQ) gives the system designer greater flexibility in optimizing system performance.

CM69R818A synchronous write and byte enables allow writing to individual bytes or the entire word.

The impedance of the output buffers CM69R818A is programmable allowing the outputs to match the impedance of the circuit traces which reduces signal reflections.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Static Control, ESD, Clean Room Products
Programmers, Development Systems
Prototyping Products
DE1
View more