CM200DY-12H

Voltage - Collector Emitter Breakdown (Max): 600V
Input: Standard
NTC Thermistor: No
Mounting Type: Chassis Mount
IGBT Type: -
Configuration: Half Bridge
Series: IGBTMOD™
Manufacturer: Powerex Inc
Current - Collector Cutoff (Max): 1mA
Package / Case: Module
Supplier Device Package: Module
Current - Collector (Ic) (Max): 200A
Input Capacitance (Cies) @ Vce: 20nF @ 10V
Power - Max: 780W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 200A


Features:

Low Drive Power
Low V_CE(sat)
Discrete Super-Fast Recovery (70ns) Free-Wheel Diode
High Frequency Operation (20-25kHz)
Isolated Baseplate for Easy Heat Sinking




Application

AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies




Specifications

Ratings	Symbol	CM400HA-34H	Units
Junction Temperature	Tj	-40 to 150	°C
Storage Temperature	Tstg	-40 to 125	°C
Collector-Emitter Voltage (G-E SHORT)	VCES	600	Volts
Gate-Emitter Voltage	VCES	±20	Volts
Collector Current	IC	200	Amperes
Peak Collector Current	ICM	400*	Amperes
Diode Forward Current	IF	200	Amperes
Diode Forward Surge Current	IFM	400*	Amperes
Power Dissipation	Pd	780	Watts
Max. Mounting Torque M6 Terminal Screws	-	17	in-lb
Max. Mounting Torque M6 Mounting Screws	-	26	in-lb
Module Weight (Typical)	-	270	Grams
V Isolation	VRMS	2500	Volts

Description

Mitsubishi IGBT Modules CM200DY-12H are designed for the application in switching applications.Each module includes two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,offering simplified system assembly and thermal management.

CM200DY-12H has many unique features: The first one is low drive power.The second one is low VCE(sat).The third one is discrete super-fast recovery.The forth one is free-wheel diode.The fifth one is high frequency operation.The sixth one is isolated baseplate for easy heat sinking.

There are some maximum ratings about CM200DY-12H(Tj = 25 °C unless otherwise specified).junction temperature(Tj) is40°C to 150°C.Storage Temperature (Tstg ) is40°C to 125 °C.Collector-Emitter Voltage (G-E SHORT)(VCES) is 600 Volts.Gate-Emitter Voltage (C-E SHORT)(VGES) is ±20 Volts.Collector Current (TC = 25°C)(IC) is 200 Amperes.Peak Collector Current(ICM) is 400 Amperes.Emitter Current** (TC = 25°C)(IE) is 200 Amperes.Weight is 270 Grams.Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)(Viso) is 2500 Vrms.