CM200DU-13H

The CM200DU-13H is designed as one kind of powerex IGBTMOD™ module that can be used in (1)AC motor control; (2)UPS; (3)battery powered supplies applications. This device consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. Features of the CM200DU-13H are:(1)low drive power; (2)low VCE(sat); (3)discrete super-fast recovery free-wheel diode; (4)isolated baseplate for easy heat sinking.

The absolute maximum ratings of the CM200DU-13H can be summarized as:(1)Junction Temperature: -40 to 150 °C;(2)Storage Temperature: 40 to 125 °C;(3)Collector-Emitter Voltage (G-E SHORT): 600 Volts;(4)Gate-Emitter Voltage (C-E SHORT): ±20 Volts;(5)Collector Current (Tc = 25°C): 200 Amperes;(6)Peak Collector Current: 400 Amperes;(7)Emitter Current (Tc= 25°C): 200 Amperes;(8)Peak Emitter Current: 400 Amperes;(9)Maximum Collector Dissipation (Tc = 25°C, Tj 150°C): 590 Watts;(10)Mounting Torque, M5 Main Terminal: 31 in-lb;(11)Mounting Torque, M6 Mounting: 40 in-lb;(12)Weight: 310 Grams.

The electrical characteristics of CM200DU-13H can be summarized as:(1)Collector-Cutoff Current: 1 mA;(2)Gate Leakage Current: 20 A;(3)Gate-Emitter Threshold Voltage: 5 to 7 Volts;(4)Total Gate Charge: 1240 nC;(5)Emitter-Collector Voltage: 2.6 Volts. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .