Features: · IC................................................................ 1200A· VCES .......................................................... 1700V· Insulated Type· 2-element in a Pack· AISiC Baseplate· Trench Gate IGBT : CSTBT™· Soft Reverse Recovery DiodeApplicationTraction drives,...
CM1200DC-34N: Features: · IC................................................................ 1200A· VCES .......................................................... 1700V· Insulated Type· 2-element in a Pack· AISi...
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Symbol |
Item |
Conditions |
Unit |
Ratings |
VCES | Collector-emitter voltage | VGE = 0V, Tj = 25°C |
1700 |
V |
VGES | Gate-emitter voltage | VCE = 0V, Tj = 25°C |
±20 |
V |
IC | Collector current | TC = 75°C |
1200 |
A |
ICM | Pulse (Note 1) |
2400 |
A | |
IE (Note 2) | Emitter current |
1200 |
A | |
IEM (Note 2) | Pulse (Note 1) |
2400 |
A | |
PC (Note 3) | Maximum power dissipation | TC = 25°C, IGBT part |
6500 |
W |
Tj | Junction temperature |
40 ~ +150 |
°C | |
Top | Operating temperature |
40 ~ +125 |
°C | |
Tstg | Storage temperature |
40 ~ +125 |
°C | |
Viso | Isolation voltage | RMS, sinusoidal, f = 60Hz, t = 1min. |
4000 |
V |
tpsc | Maximum short circuit pulse width |
VCC = 1200V, VCES 1700V, VGE = 15V Tj = 125°C |
10 |
µs |