CM100TJ-12F

Features:

·Low Drive Power
·Low V_CE(sat)
·Discrete Super-Fast Recovery Free-Wheel Diode
·Isolated Baseplate for Easy Heat Sinking


Application

·AC Motor Control
·UPS
·Battery Powered Supplies


Specifications

Ratings	Symbol	CM900HB-90H	Units
Junction Temperature	Tj	-40 to 150	°C
Storage Temperature	Tstg	-40 to 125	°C
Collector-Emitter Voltage (G-E SHORT)	VCES	600	Volts
Gate-Emitter Voltage(G-E SHORT)	VGES	±20	Volts
Collector Current (Tc = 25°C)	IC	100	Amperes
Peak Collector Current(Tj 150°C)	ICM	200*	Amperes
Emitter Current**(Tc = 25°C)	IE	100	Amperes
Peak Emitter Current**	IEM	200*	Amperes
Maximum Collector Dissipation ((Tj < 25°C)	Pc	290	Watts
Mounting Torque, M5 Mounting	-	31	in-lb
Weight	-	300	Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)	Viso	2500	Volts

Description

Powerex IGBTMOD? Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse- connected super-fast recovery free-wheel diode. All CM100TJ-12F components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.