Features: Internal Pre-matchingSingle Supply operationPower Gain 8 dBESD Protection on boardCurrent Control for multiple applications2.5% EVM @ 26.5 dBm avg power, 802.16 OFDMsignal format, PAR = 9 dBPlastic Surface mount packagingLow Thermal ResistanceIdeal for WiMAX applicationsLead Free and RoH...
CHV2711-QJ: Features: Internal Pre-matchingSingle Supply operationPower Gain 8 dBESD Protection on boardCurrent Control for multiple applications2.5% EVM @ 26.5 dBm avg power, 802.16 OFDMsignal format, PAR = 9 ...
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Voltage Supply (Vcc) | 4.5 (min) / 12 V (max) |
Current (Icc) | 2000 mA |
Dissipated Power (Pdiss) | 18W |
Input Power (Pin) | 22 dBm |
Storage Temperature (Tstg) | -60 to +150 ºC |
Channel Temperature (Tch) | 175 ºC |
Thermal Resistance (Rth) | 5 ºC/W |
Operating Backside Temperature (Tb) | -40 ºC to (see note 1) |
The CHV2711 internally pre-matched power HBT device provides 8 dB of gain, 2.5% EVM at 26.5 dBm output power for 802.16 OFDM signal with a peak to average power ratio of 9 dB. CHV2711-QJ operates off a single supply voltage up to 12V and includes internal bias circuitry to enable exact setting of the quiescent current using an external Vcontrol. This Vcontrol is non-unique voltage setting and the same value can be used for each part depending on the required Icq. CHV2711-QJ is ideal for high linearity, high data rate applications such as WiMAX. Internal pre-matching facilitates a simplified external matching approach and the highest in-band gain potential of the device. CHV2711-QJ operates with unique matching at each of the popular WiMAX bands with the inherent repeatability of an InGaP HBT process.