CHS5100

Features:

·Broadband performance : DC-20GHz
·Low insertion loss : 2.1dB@20GHz
·High isolation : 53dB@1GHz 30dB@20GHz
·Excellent input and output matching: VSWR < 1.5:1
·Chip size : 1,92 x 1,22 x 0.1mm


Specifications

Symbol	Parameter	Value	Unit
VH,VL	Control voltages	-8 to 0	Volt
Pin	Maximum peak input power overdrive (2)	30	dBm
Top	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +125

Description

The CHS5100 is a wideband monolithic FET based reflective switch manufactured on a standard power process using 0.7µm implanted active layer MESFET, via holes, air bridges and electron beam gate lithography.
This wideband switch is suitable for ultra broadband ECM and EW systems. CHS5100 can also be used in instrumentation and wideband signal processing applications.
Available in chip form