CHS2190a

Features:

·Broadband performances : 50-60GHz
·Low insertion loss : 2dB max
·High isolation : 25dB min
·Chip size : 2.16 x 0.75 x 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vak	Max. negative anode cathode voltage	-3.5	V
Ig	Max. forward current in Schottky diodes	30	mA
Pin	Maximum peak input power overdrive (2)	+18	dBm
Top	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +125

Description

The CHS2190a is a wideband monolithic diode based reflective switch.
CHS2190a is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.
The circuit is manufactured with a high performance Schottky diode process, 1µm gate length (stepper lithography), via holes through the substrate and air bridges.