CHA7010

Features:

·10W output power
·High gain : > 18dB @ 10GHz
·High PAE : > 35% @ 10GHz
·On-chip bias control
·Linear collector current control
·High impedance interface for pulse mode
·Temperature compensated
·Chip size: 4.74 x 4.36 x 0.1 mm


Specifications

Symbol	Parameter	Values	Unit
Cmp	Compression level	6	dB
Vc	Power supply voltage	10	V
Ic	Power supply quiescent current	2.8	A
Ic_sat	Power supply current in saturation	3.5	A
Vctr	Collector current control voltage	6.5	V
Tstg	Storage temperature range	-55 to +125

Description

The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications.

CHA7010 is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability.
To simplify the assembly process;

• the backside of the chip CHA7010 is both RF and DC grounded

• bond pads and back side are gold plated for compatibility with eutectic die attach method and thermo-sonic or thermo-compression bonding process.