CHA4092

Features:

·Broadband performances : 20-30GHz
·22 dBm output power ( 1dB gain comp. )
·17 dB ± 1.5 dB gain
·Chip size : 1.65 X 2.15 X 0.10 mm


Specifications

Symbol	Parameter	Values	Unit
Vd	Drain bias voltage	4	V
Id	Drain bias current	1200	mA
Vg	Gate bias voltage	-2 to +0.4	V
Ta	Operating temperature range	-40 to +85
Tstg	Storage temperature range	-55 to +155

Description

The CHA4092 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

CHA4092 is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

CHA4092 is available in chip form.