CFS0303-SB

Features: · AIGaAs/InGaAs/AIGaAs PseudomorphicHigh Electron Mobility Transistor (pHEMT)· High Dynamic Range· Low Current and Voltage· Bias Point 3V and 60 mA· 0.3 dB Noise Figure at 2 GHz· 17 dBm P1dB at 2 GHz· 33 dBm OIP3 at 2 GHz· 600 m Gate Width: 50 Output Impedance· Excellent Uniformity· Low-...

product image

CFS0303-SB Picture
SeekIC No. : 004313135 Detail

CFS0303-SB: Features: · AIGaAs/InGaAs/AIGaAs PseudomorphicHigh Electron Mobility Transistor (pHEMT)· High Dynamic Range· Low Current and Voltage· Bias Point 3V and 60 mA· 0.3 dB Noise Figure at 2 GHz· 17 dBm P1...

floor Price/Ceiling Price

Part Number:
CFS0303-SB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· AIGaAs/InGaAs/AIGaAs Pseudomorphic
High Electron Mobility Transistor (pHEMT)
· High Dynamic Range
· Low Current and Voltage
· Bias Point 3V and 60 mA
· 0.3 dB Noise Figure at 2 GHz
· 17 dBm P1dB at 2 GHz
· 33 dBm OIP3 at 2 GHz
· 600 m Gate Width: 50 Output Impedance
· Excellent Uniformity
· Low-Cost, Surface-Mount Package (SOT-343)
· Ro-HS Compliant Construction
· Low Thermal Resistance: 98ºC/W





Application

· Low Noise Amplifiers and Oscillators Operating over the RF and Microwave Frequency Ranges
· Cellular/PCS/GSM/W-CDMA
· Mobile Handsets, Base Station Receivers and Tower-Mount Amplifiers
· Wimax, WLAN, LEO, GEO, WLL/RLL, GPS and MMDS Applications
· General Purpose Discrete pHEMT for Other Ultra Low-Noise and Medium Power Applications





Pinout

  Connection Diagram




Specifications

Parameter Rating Parameter Rating Parameter Rating
Drain-Source Voltage 2 +5.5V Drain Current 2 Idss3 A Channel Temperature +175ºC
Gate-Source Voltage 2 -5.0V Total Pwr Dissipation 560W Storage Temperature -65ºC to +160ºC
Gate-Drain Voltage 2 -5.0V RF Input Power 17 dBm Thermal Resistance 98ºC/W
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage
2. Assumes DC quiescent conditions. RF OFF.
3. Vgs=0V





Description

Mimix's pHEMT technology is tested and proven in military, space and commercial applications. Mimix's proven workhorse, the CF003-03, has been fabricated in the Company's in-house foundry for over 19 years and is now available in packaged form as the CFS0303-SB.

The CFS0303-SB is a high dynamic range, lownoise, pHEMT packaged in a 4-lead SOT-343 surface-mount plastic package. CFS0303-SB is intended for many applications operating in the 0.1GHz to 10GHz frequency range.

Mimix's high performance packaged pHEMTs are ideal for use in all applications where low-noise figure, high gain, medium power and good intercept is required. The CFS0303-SB is the perfect solution for the first or second stage of a base station LNA due to the excellent combination of low-noise figure and linearity. CFS0303-SB is also well suited as a medium power driver stage in pole-top amplifiers and othertransmit functions, particularly as the low thermal resistance allows extended power dissipation when voltage and current are adjusted for increased power and linearity.






Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Cables, Wires
Boxes, Enclosures, Racks
Prototyping Products
DE1
Circuit Protection
View more