Features: N-channel dual-gate GaAs MES FETDepletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners Low noise lHigh gain lLow input capacitanceSpecifications Parameter Symbol Values Unit Drain-source voltage VDS 10 V Gate 1-source...
CF739: Features: N-channel dual-gate GaAs MES FETDepletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners Low noise lHigh gain lLow input capacitanceSpecifi...
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N-channel dual-gate GaAs MES FET
Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners
Low noise
l High gain
l Low input capacitance
Parameter | Symbol | Values | Unit |
Drain-source voltage | VDS | 10 | V |
Gate 1-source voltage | VG1S | 6 | |
Gate 2-source voltage | VG2S | 6 | |
Drain current | ID | 80 | mA |
Gate 1-source peak current | + IG1SM | 1 | |
Gate 2-source peak current | + IG1SM | 1 | |
Total power dissipation, TS 66 °C2) | Ptot | 240 | mW |
Channel temperature | Tch | 150 | °C |
Storage temperature range | Tstg | 55 . + 150 |