Features: ·30V, 75A, RDS(ON) = 7mW @VGS = 10V.·Super high dense cell design for extremely low RDS(ON).·High power and current handing capability.·TO-220 & TO-263 package.·RDS(ON) = 10mW @VGS = 4.5V.·Lead free product is acquired.·100% avalanche tested.Specifications Parameter Symbol Lim...
CEP76139: Features: ·30V, 75A, RDS(ON) = 7mW @VGS = 10V.·Super high dense cell design for extremely low RDS(ON).·High power and current handing capability.·TO-220 & TO-263 package.·RDS(ON) = 10mW @VGS = 4...
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Parameter | Symbol | Limit | Unit |
Drain-Source Voltage | VDS | 30 | V |
Gate-Source Voltage | VGS | ±20 | V |
Drain Current-Pulsed a | ID | 75 | A |
Maximum Power Dissipation @ TC = 25 - Derate above 25 |
IDM | 225 | A |
Maximum Power Dissipation | PD | 75 | W |
0.5 | W/ | ||
Single Pulsed Avalanche Energy d | EAS | 228 | mJ |
Single Pulsed Avalanche Current d | IAS | 100 | A |
Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to 175 |