CEP60N10 Selling Leads, Price trend, CEP60N10 DataSheet download, circuit diagram from SeekIC.com

Features: 100V, 60A, RDS(ON) = 23.5mW @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.Specifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V G...

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CEP60N10: Features: 100V, 60A, RDS(ON) = 23.5mW @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 pa...

CEP60N10 Data Sheet

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Part Number:: CEP60N10
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/4

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Features:

100V, 60A, RDS_(ON) = 23.5mW @V_GS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.

Specifications

Parameter	Symbol	Limit	Unit
Drain-Source Voltage	V_DS	100	V
Gate-Source Voltage	V_GS	±20	V
Drain Current-Continuous	I_D	60	A
Drain Current-Pulsed ^a	I_DM	240	A
Maximum Power Dissipation @T=25 Derate above 25	P_D	200	W
Maximum Power Dissipation @T=25 Derate above 25	P_D	1.3	W/
Single Pulsed Avalanche Energy ^d	E_AS	148	mJ
Single Pulsed Avalanche Current ^d	I_AS	46	A
Operating and Storage Temperature Range	T_J, T_STG	-65 to 175

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CEP60N10

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