Features: ·30V, 48A, R DS(ON) =16.5mW @VGS = 10V.R DS(ON) =28mW @VGS = 4.5V.·Super high dense cell design for extremely low RDS(ON).·High power and current handing capability.·TO-220 & TO-263 package.Specifications Parameter Symbol Limit Units Drain-Source Voltage VDS 30...
CEP51A3: Features: ·30V, 48A, R DS(ON) =16.5mW @VGS = 10V.R DS(ON) =28mW @VGS = 4.5V.·Super high dense cell design for extremely low RDS(ON).·High power and current handing capability.·TO-220 & TO-263 pa...
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Parameter |
Symbol |
Limit |
Units |
Drain-Source Voltage |
VDS |
30 |
V |
Gate-Source Voltage |
VGS |
±20 |
V |
Drain Current-Continuous |
ID |
48 |
A |
Drain Current-Pulsed a |
IDM |
160 |
A |
Maximum Power Dissipation @ TC = 25 - Derate above 25 |
PD |
70 |
W |
0.48 |
W/ | ||
Operating and Store Temperature Range |
TJ,Tstg |
-55 to 175 |